ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 101/101A 1 watt - 28 volts, class c microwave, 500-1200 mhz general description the 101/101A is a common base transistor capable of providing 1 watt class c, rf output power at 500-1200 mhz. gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. the transistor uses a fully hermetic high temperature solder sealed package. case outline 55bt-1, style 1 absolute maximum ratings maximum power dissipation @ 25 c 7.0 watts o maximum voltage and current bvces collector to emitter voltage 50 volts bvebo emitter to base voltage 3.5 volts ic collector current 200 ma maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr 1 power out power input power gain collector efficiency load mismatch tolerance f = 2 ghz vcb = 28 volts po = 1.0 watts as above f = 2 ghz, po = 1.0 w 1.0 9.0 9.5 40 0.125 30:1 watt watt db % bvces bvcbo bvebo icbo h fe cob q jc collector to emitter breakdown collector to base breakdown emitter to base breakdown collector to base current current gain output capacitance thermal resistance ic = 10 ma ic = 1 ma ie = 1.0 ma vcb = 28 volts vce = 5 v, ic = 100 ma f =1 mhz, vcb = 28 v 50 45 3.5 20 4.0 500 35 volts volts volts m a pf ( c /w initial issue june, 1994
101/101A
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